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dc.contributor.authorMoschetto, Salvatore
dc.contributor.authorBenvenuti, Emilia
dc.contributor.authorUsta, Hakan
dc.contributor.authorÖzdemir, Resul
dc.contributor.authorFacchetti, Antonio
dc.contributor.authorMuccini, Michele
dc.contributor.authorProsa, Mario
dc.contributor.authorToffanin, Stefano
dc.date.accessioned2022-07-01T08:34:57Z
dc.date.available2022-07-01T08:34:57Z
dc.date.issued2022en_US
dc.identifier.issn2196-7350
dc.identifier.otherWOS:000742745500001
dc.identifier.urihttps://doi.org/10.1002/admi.202101926
dc.identifier.urihttps://hdl.handle.net/20.500.12573/1306
dc.description.abstractThe fascinating characteristic of organic light-emitting transistors (OLETs) of being electrical switches with an intrinsic light-emitting capability makes them attractive candidates for a wide variety of applications, ranging from sensors to displays. To date, the OLET ambipolar trilayer heterostructure is the most developed architecture for maximizing device performance. However, a major challenge of trilayer OLETs remains the inverse correlation between external quantum efficiency and brightness under ambipolar conditions. The complex interconnection between electroluminescent and ambipolar charge transport properties, in conjunction with the limited availability of electron transport semiconducting materials, has indeed hampered the disruptive evolution of the OLET technology. Here, an in-depth study of the interplay of the key fundamental features that determine the device performance is reported by exploring electron transport semiconductors with different properties in ambipolar trilayer OLETs. Through the selection of compounds with tailored chemical structures, the relation between intrinsic optoelectronic characteristics of the electron transport semiconductor, energy level alignment within the structure, and morphological features is unraveled. Furthermore, the introduction of a suitable electron injector at the emissive/semiconducting layers interface sheds light into the bidimensional nature of OLETs that is a distinguishing factor of this class of devices with respect to prototypical organic light-emitting diodes.en_US
dc.description.sponsorshipEuropean Union's Horizon 2020 Research and Innovation Programme *Grant number:101016706en_US
dc.language.isoengen_US
dc.publisherWILEYen_US
dc.relation.isversionof10.1002/admi.202101926en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectambipolar trilayer heterostructureen_US
dc.subjectelectron injection layeren_US
dc.subjectexternal quantum efficiencyen_US
dc.subjectn-type organic semiconductorsen_US
dc.subjectorganic light-emitting transistorsen_US
dc.subjectwide area emissionen_US
dc.titleInterplay between Charge Injection, Electron Transport, and Quantum Efficiency in Ambipolar Trilayer Organic Light-Emitting Transistorsen_US
dc.typearticleen_US
dc.contributor.departmentAGÜ, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümüen_US
dc.contributor.authorID0000-0003-4099-8664en_US
dc.contributor.authorID0000-0001-5533-1585en_US
dc.contributor.authorID0000-0002-7957-110Xen_US
dc.contributor.institutionauthorUsta, Hakan
dc.identifier.volume9en_US
dc.identifier.issue5en_US
dc.identifier.startpage1en_US
dc.identifier.endpage11en_US
dc.relation.journalADVANCED MATERIALS INTERFACESen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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