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dc.contributor.authorBastami, Nasim
dc.contributor.authorSoheyli, Ehsan
dc.contributor.authorArslan, Aysenur
dc.contributor.authorSahraei, Reza
dc.contributor.authorYazici, Ahmet Faruk
dc.contributor.authorMutlugun, Evren
dc.date.accessioned2023-02-23T13:15:42Z
dc.date.available2023-02-23T13:15:42Z
dc.date.issued2022en_US
dc.identifier.issn2637-6113
dc.identifier.otherWOS:000835538000001
dc.identifier.urihttps://doi.org/10.1021/acsaelm.2c00485
dc.identifier.urihttps://hdl.handle.net/20.500.12573/1453
dc.description.abstractMolybdenum disulfides and molybdenum trioxides are structures that possess the potential to work as efficient charge transport layers in optoelectronic devices. In the present study, as opposed to the existing Mo-based nanostructures in flake, sheet, or spherical forms, an extremely simple and low-cost hydrothermal method is used to prepare nanowires (NWs) of MoS2@MoO3 (MSO) composites. The synthesis method includes several advantages including easy handling and processing of inexpensive precursors to reach stable MSO NWs without the need for an oxygen-free medium, which would facilitate the possibility of mass production of these nanostructures. The structural analysis confirmed the formation of MSO nanocomposites with different Mo valence states, as well as NWs of average length and diameter of 70 nm and 5 nm, respectively. In order to demonstrate their potential for optoelectronic applications, MSO NWs were blended into hole injection layers (HILs) in quantum dot-based lightemitting diodes (QLEDs). Electroluminescence measurements show a substantial enhancement in both luminance (from 44,330 to 68,630 cd.m−2 ) and external quantum efficiency (from 1.6 to 2.3%), based on the increase in the ratio of MSO NWs from 3 to 10%. Interestingly, the addition of 10% volume of MSO NWs resulted in a remarkably smoother HIL with improved current efficiency and stability in green-emitting QLEDs. The simplicity and cost-effective features of the synthesis method along with outstanding favorable morphology demonstrated their ability to enhance the QLED performance and mark them as promising agents for optoelectronics.en_US
dc.language.isoengen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.relation.isversionof10.1021/acsaelm.2c00485en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMoS2@MoO3en_US
dc.subjectnanowireen_US
dc.subjectnanocompositeen_US
dc.subjecthole-transport layeren_US
dc.subjectroughnessen_US
dc.subjectelectroluminescenceen_US
dc.titleNanowire-Shaped MoS2@MoO3 Nanocomposites as a Hole Injection Layer for Quantum Dot Light-Emitting Diodesen_US
dc.typearticleen_US
dc.contributor.departmentAGÜ, Mühendislik Fakültesi, Elektrik - Elektronik Mühendisliği Bölümüen_US
dc.contributor.authorID0000-0003-2747-7856en_US
dc.contributor.authorID0000-0002-1403-7934en_US
dc.contributor.authorID0000-0003-3715-5594en_US
dc.contributor.institutionauthorSoheyli, Ehsan
dc.contributor.institutionauthorArslan, Ayşenur
dc.contributor.institutionauthorYazıcı, Ahmet Faruk
dc.contributor.institutionauthorMutlugün, Evren
dc.identifier.volume4en_US
dc.identifier.issue8en_US
dc.identifier.startpage3849en_US
dc.identifier.endpage3859en_US
dc.relation.journalACS APPLIED ELECTRONIC MATERIALSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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