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Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient
(WILEY-V C H VERLAG GMBHPOSTFACH 101161, 69451 WEINHEIM, GERMANY, 2014)
Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited ...
Perfluoroalkyl-Functionalized Thiazole Thiophene Oligomers as N-Channel Semiconductors in Organic Field-Effect and Light-Emitting Transistors
(AMER CHEMICAL SOC, 2014)
Despite their favorable electronic and structural properties, the synthetic development and incorporation of thiazole-based building blocks into n-type semiconductors has lagged behind that of other π-deficient building ...